Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au-Ti Schottky Barriers
Identifieur interne : 000718 ( Russie/Analysis ); précédent : 000717; suivant : 000719Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au-Ti Schottky Barriers
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Abstract
The structures comprising three epitaxial InP layers-buffer (n++), active (n), and contact (n+)-were grown by liquid phase epitaxy on porous and compact (control) InP(100) substrates. High quality of the active n-InP layer obtained on a porous substrate (in comparison to the control samples) is confirmed by the values of the halfwidths of the (311) X-ray diffraction reflections (54========Prime; versus 76========Prime;), dislocation concentration (5 × 102-5 × 103 cm-2 versus 5 × 104-5 × 105 cm-2), and electron mobility (4000 cm2 /V s versus 3000-3500 cm2 /V s). Using these homoepitaxial InP structures, Au-Ti Schottky diodes with a working mesastructure area of ∼1.8 × 10-6 cm2 were prepared. It was found that diodes based on the porous substrates are characterized by significantly smaller leak currents and higher breakdown voltages as compared to those of the control diodes: 1 nA, 27 V versus 200 nA, 15 V. © 2002 MAIK Nauka / Interperiodica .
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au-Ti Schottky Barriers</title><author><name sortKey="Arsentev, I N" uniqKey="Arsentev I">I. N. Arsentev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea><wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1> Orion State Research Institute, Kiev, Ukraine</s1></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea> Orion State Research Institute, Kiev</wicri:regionArea><wicri:noRegion>Kiev</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine</s1></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev</wicri:regionArea><wicri:noRegion>Kiev</wicri:noRegion></affiliation></author><author><name sortKey="Baidakova, M V" uniqKey="Baidakova M">M. V. Baidakova</name></author><author><name sortKey="Bobyl, A V" uniqKey="Bobyl A">A. V. Bobyl</name></author><author><name sortKey="Vavilova, L S" uniqKey="Vavilova L">L. S. Vavilova</name></author><author><name sortKey="Konnikov, S G" uniqKey="Konnikov S">S. G. Konnikov</name></author><author><name sortKey="Ulin, V P" uniqKey="Ulin V">V. P. Ulin</name></author><author><name sortKey="Boltovets, N S" uniqKey="Boltovets N">N. S. Boltovets</name></author><author><name sortKey="Konakova, R V" uniqKey="Konakova R">R. V. Konakova</name></author><author><name sortKey="Milenin, V V" uniqKey="Milenin V">V. V. Milenin</name></author><author><name sortKey="Voitsikhovskii, D I" uniqKey="Voitsikhovskii D">D. I. Voitsikhovskii</name></author></titleStmt><publicationStmt><idno type="inist">02-0462923</idno><date when="2002-09">2002-09</date><idno type="stanalyst">PASCAL 02-0462923 AIP</idno><idno type="RBID">Pascal:02-0462923</idno><idno type="wicri:Area/Main/Corpus">00E885</idno><idno type="wicri:Area/Main/Repository">00DE86</idno><idno type="wicri:Area/Russie/Extraction">000718</idno></publicationStmt><seriesStmt><idno type="ISSN">1063-7850</idno><title level="j" type="abbreviated">Tech. phys. lett.</title><title level="j" type="main">Technical physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dislocations</term><term>Electron mobility</term><term>Epitaxial layers</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>LPE</term><term>Phosphorus compounds</term><term>Porous materials</term><term>Schottky barriers</term><term>Solid structure</term><term>Substrates</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>6855J</term><term>7330</term><term>8115L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Phosphore composé</term><term>Couche épitaxique</term><term>Matériau poreux</term><term>Substrat</term><term>Barrière Schottky</term><term>Epitaxie phase liquide</term><term>Semiconducteur III-V</term><term>Structure état solide</term><term>Dislocation</term><term>Mobilité électron</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The structures comprising three epitaxial InP layers-buffer (n<sup>++</sup>), active (n), and contact (n<sup>+</sup>)-were grown by liquid phase epitaxy on porous and compact (control) InP(100) substrates. High quality of the active n-InP layer obtained on a porous substrate (in comparison to the control samples) is confirmed by the values of the halfwidths of the (311) X-ray diffraction reflections (54========Prime; versus 76========Prime;), dislocation concentration (5 × 10<sup>2</sup>-5 × 10<sup>3</sup> cm<sup>-2</sup> versus 5 × 10<sup>4</sup>-5 × 10<sup>5</sup> cm<sup>-2</sup>), and electron mobility (4000 cm<sup>2</sup> /V s versus 3000-3500 cm<sup>2</sup> /V s). Using these homoepitaxial InP structures, Au-Ti Schottky diodes with a working mesastructure area of ∼1.8 × 10<sup>-6</sup> cm<sup>2</sup> were prepared. It was found that diodes based on the porous substrates are characterized by significantly smaller leak currents and higher breakdown voltages as compared to those of the control diodes: 1 nA, 27 V versus 200 nA, 15 V. © 2002 MAIK Nauka / Interperiodica .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7850</s0></fA01><fA02 i1="01"><s0>TPLEED</s0></fA02><fA03 i2="1"><s0>Tech. phys. lett.</s0></fA03><fA05><s2>28</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au-Ti Schottky Barriers</s1></fA08><fA11 i1="01" i2="1"><s1>ARSENTEV (I. N.)</s1></fA11><fA11 i1="02" i2="1"><s1>BAIDAKOVA (M. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>BOBYL (A. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>VAVILOVA (L. S.)</s1></fA11><fA11 i1="05" i2="1"><s1>KONNIKOV (S. G.)</s1></fA11><fA11 i1="06" i2="1"><s1>ULIN (V. 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Using these homoepitaxial InP structures, Au-Ti Schottky diodes with a working mesastructure area of ∼1.8 × 10<sup>-6</sup> cm<sup>2</sup> were prepared. 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